1/8 may 2004 STW240NF55 n-channel 55v - 0.0027 ? - 120a to-247 stripfet? ii power mosfet typical r ds (on) = 0.0027 ? standard threshold drive 100% avalanche tested description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip- based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications high current, high switching speed or-ing function ordering information type v dss r ds(on) i d (1) STW240NF55 55v <0.0035 ? 120a sales type marking package packaging STW240NF55 w240nf55 to-247 tube 1 2 3 to-247 absolute maximum ratings ( ?) pulse width limited by safe operating area. (1)current limited by package (2) i sd 120a, di/dt 600a/s, v dd 48v, t j t jmax. (3) starting t j = 25 o c, i d = 60a, v dd = 30v symbol parameter value unit v ds drain-source voltage (v gs = 0) 55 v v dgr drain-gate voltage (r gs = 20 k ? ) 55 v v gs gate- source voltage 20 v i d (1 ) drain current (continuous) at t c = 25c 120 a i d (1 ) drain current (continuous) at t c = 100c 120 a i dm ( ?) drain current (pulsed) 480 a p tot total dissipation at t c = 25c 500 w derating factor 3.33 w/c dv/dt (2) peak diode recovery voltage slope 5 v/ns e as (3) single pulse avalanche energy 3.5 j t stg storage temperature -55 to 175 c t j operating junction temperature internal schematic diagram
STW240NF55 2/8 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose (1.6 mm from case, for 10 sec) max max typ 0.3 50 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 55 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 24v r ds(on) static drain-source on resistance v gs = 10 v i d = 60 a 2.7 3.5 m ? symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15 v i d =60 a 100 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 12250 2600 745 pf pf pf
3/8 STW240NF55 switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ?) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 27.5 v i d = 60 a r g =4.7 ? v gs = 10 v (resistive load, figure 3) 52 235 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =27.5v i d =120a v gs =10v 350 75 140 480 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 27.5 v i d = 60 a r g =4.7 ?, v gs = 10 v (resistive load, figure 3) 225 115 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 120 480 a a v sd (*) forward on voltage i sd = 120 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 120 a di/dt = 100a/s v dd = 20 v t j = 150c (see test circuit, figure 5) 115 435 7.6 ns nc a electrical characteristics (continued) safe operating area thermal impedance
STW240NF55 4/8 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/8 STW240NF55 normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature . .
STW240NF55 6/8 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/8 STW240NF55 dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 p025p to-247 mechanical data
STW240NF55 8/8 i nformation furnished is believed to be accurate and reliable. ho wever, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners. ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco -singapore - spain - sweden - switzerland - united kingdom - united states. www.st.com
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